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Keyshot 6 license keys any computer OS keyshot 6 license key KeyShot 6 Activation Key1. Field of the Invention
The present invention relates to a semiconductor memory device and particularly to a semiconductor memory device having a repair function of repairing defective memory cells by replacing the defective memory cells with redundant memory cells.
2. Description of the Related Art
A flash memory is one of rewritable nonvolatile memories. The flash memory is implemented as a memory cell array of NAND-type flash cells. The NAND-type flash cells have a charge accumulation layer provided between a control gate and a channel as a storing layer, and have the charge accumulation layer capacity-controlled (added with a voltage) with respect to a control gate electrode. A memory cell array is formed of a plurality of NAND flash cells connected to one another in series with a drain in common.
The drain of the NAND flash cell is connected to a bit line via a select gate transistor. The select gate transistor is a transistor provided between the NAND flash cell and the bit line. By a column operation (program or read operation) which drains from the NAND flash cells, a voltage is applied to the bit line, and a voltage (e.g., 0 V) is applied to the bit line in the select gate transistor.
A semiconductor memory device has a plurality of memory cell arrays which are formed of nonvolatile memory cells arranged in a matrix on a semiconductor substrate. The memory cell arrays are disposed along parallel bit lines. On the other hand, word lines are disposed along a row direction between the memory cell arrays, and a select gate transistor is provided between a memory cell array and a bit line. The select gate transistor is provided for each memory cell array.
A plurality of the memory cell arrays are formed in an area corresponding to a plurality of sectors. Each memory cell array has a peripheral circuit region having a peripheral circuit for controlling data read/write and so on. The peripheral circuit region includes a select gate transistor and a bit line precharging circuit.
When a defect is detected in a cell array (corresponds to a memory cell) due to a drop in the threshold voltage or the like, the defective memory cell is replaced with a redundant memory cell. As a circuit for replacing a memory cell,

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